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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9671697 B1

PDFFull Text
Date of Patent:
Jun. 06, 2017

Filed:

Jun. 03, 2016

Pattern treatment methods

Applicants:

Dow Global Technologies Llc, Midland, MI (US);

Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);

Inventors:

Huaxing Zhou, Furlong, PA (US);

Mingqi Li, Shrewsbury, MA (US);

Vipul Jain, North Grafton, MA (US);

Jong Keun Park, Shrewsbury, MA (US);

Phillip D. Hustad, Natick, MA (US);

Jin Wuk Sung, Northborough, MA (US);

Assignees:

Dow Global Technologies LLC, Midland, MI (US);

Rohm and Haas Electronic Materials LLC, Marlborough, MA (US);

Attorney:

Jonathan D. Baskin

Primary Examiner:

Amanda C Walke

Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/11 (2006.01); G03F 7/40 (2006.01); G03F 7/00 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); C09D 153/00 (2006.01); H01L 21/027 (2006.01); C08F 293/00 (2006.01); G03F 7/039 (2006.01); G03F 7/32 (2006.01);
U.S. Cl.
CPC ...
G03F 7/405 (2013.01); C08F 293/00 (2013.01); C09D 153/00 (2013.01); G03F 7/002 (2013.01); G03F 7/0397 (2013.01); G03F 7/11 (2013.01); G03F 7/165 (2013.01); G03F 7/168 (2013.01); G03F 7/20 (2013.01); G03F 7/325 (2013.01); G03F 7/40 (2013.01); H01L 21/0274 (2013.01);
Abstract

Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a block copolymer and a solvent, wherein the block copolymer comprises a first block and a second block, wherein the first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group, and the second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and a cyclic aliphatic group; and (c) rinsing residual pattern treatment composition from the substrate, leaving a portion of the block copolymer bonded to the patterned feature. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

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