The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Dec. 22, 2010
Chin-hsiang Lin, Hsin-Chu, TW;
Heng-jen Lee, Baoshan Township, Hsinchu County, TW;
I-hsiung Huang, Hukou Shiang, Hsinchu County, TW;
Chih-chiang Tu, Tauyen, TW;
Chun-jen Chen, Renwu Township, Kaohsiung County, TW;
Rick Lai, Taichung, TW;
Chin-Hsiang Lin, Hsin-Chu, TW;
Heng-Jen Lee, Baoshan Township, Hsinchu County, TW;
I-Hsiung Huang, Hukou Shiang, Hsinchu County, TW;
Chih-Chiang Tu, Tauyen, TW;
Chun-Jen Chen, Renwu Township, Kaohsiung County, TW;
Rick Lai, Taichung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
The present disclosure provides for many different embodiments. An exemplary method can include providing a mask fabricated according to a design pattern; extracting a mask pattern from the mask; converting the mask pattern into a rendered mask pattern, wherein the simulated design pattern includes the design pattern and any defects in the mask; simulating a lithography process using the rendered mask pattern to create a virtual wafer pattern; and determining whether any defects in the mask are critical based on the virtual wafer pattern. The critical defects in the mask can be repaired.