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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9666660 B1

PDFFull Text
Date of Patent:
May. 30, 2017

Filed:

Aug. 16, 2013

Semiconductor structures including metal insulator metal capacitor

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Fang-Ting Kuo, Zhubei, TW;

Ren-Wei Xiao, Shetou Township, TW;

Sheng Yu Lin, Taoyuan, TW;

Chia-Wei Liu, Zhubei, TW;

Chun Hua Chang, Zhubei, TW;

Chien-Ying Wu, New Taipei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., , TW;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

Eric Ward

Int. Cl.
CPC ...
H01L 29/92 (2006.01); H01L 49/02 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 23/5223 (2013.01); H01L 28/65 (2013.01);
Abstract

A metal insulator metal (MIM) capacitor includes a base layer and a copper bulk layer in the base layer. The MIM capacitor further includes an etch stop layer over the base layer and the copper bulk layer and an oxide-based dielectric layer over the etch stop layer. The MIM capacitor further includes a capacitor bottom layer over the oxide-based dielectric layer, an insulator layer over the capacitor bottom layer, and a capacitor top layer over the insulator layer.

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Kuo, Fang-Ting. (2017). Semiconductor structures including metal insulator metal capacitor (U.S. Patent No. 9666660). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9666660

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