The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2017

Filed:

Jun. 30, 2016
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Hung-Chih Wang, Hsinchu, TW;

Yao-Hsiang Liang, Shinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 27/088 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 21/76841 (2013.01); H01L 23/528 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 24/00 (2013.01); H01L 24/03 (2013.01); H01L 24/13 (2013.01); H01L 27/088 (2013.01); H01L 23/522 (2013.01); H01L 2224/0218 (2013.01); H01L 2224/0219 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05624 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01031 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/206 (2013.01); H01L 2924/30201 (2013.01);
Abstract

A connective structure for bonding semiconductor devices and methods for forming the same are provided. The bonding structure includes an alpad structure, i.e., a thick aluminum-containing connective pad, and a substructure beneath the aluminum-containing pad that includes at least a pre-metal layer and a barrier layer. The pre-metal layer is a dense material layer and includes a density greater than the barrier layer and is a low surface roughness film. The high density pre-metal layer prevents plasma damage from producing charges in underlying dielectric materials or destroying subjacent semiconductor devices.


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