The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Apr. 09, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Joanna Chaw Yane Yin, Hsinchu, TW;
Chi-Hsi Wu, Hsinchu, TW;
Kuo-Chiang Ting, Hsinchu, TW;
Chen Kuang-Hsin, Jung-Li, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 29/6681 (2013.01);
Abstract
The present disclosure provides many different embodiments of fabricating a FinFET device that provide one or more improvements over the prior art. In one embodiment, a method of fabricating a FinFET includes providing a semiconductor substrate and a plurality of dummy fins and active fins on the semiconductor substrate. A predetermined group of dummy fins is removed.