The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Aug. 31, 2015
Applicant:

American Air Liquide, Inc., Fremont, CA (US);

Inventors:

Vijay Surla, Newark, DE (US);

Rahul Gupta, Newark, DE (US);

Venkateswara R. Pallem, Hockessin, DE (US);

Assignee:

American Air Liquide, Inc., Fremont, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); C07C 255/10 (2006.01); C07C 251/08 (2006.01); C07C 251/26 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); C07C 251/08 (2013.01); C07C 251/26 (2013.01); C07C 255/10 (2013.01); H01L 21/31144 (2013.01);
Abstract

A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of a nitrogen containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the nitrogen containing etching compound is an organofluorine compound containing at least one C≡N or C═N functional group; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated nitrogen containing etching compound capable of etching the silicon-containing film from the substrate.


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