The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Mar. 27, 2015
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Joydeep Guha, Fremont, CA (US);
Sirish K. Reddy, Hillsboro, OR (US);
Kaushik Chattopadhyay, San Jose, CA (US);
Thomas W. Mountsier, San Jose, CA (US);
Aaron Eppler, Fremont, CA (US);
Thorsten Lill, Santa Clara, CA (US);
Vahid Vahedi, Oakland, CA (US);
Harmeet Singh, Fremont, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/306 (2006.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/30604 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 27/11556 (2013.01);
Abstract
A method for etching features in a stack is provided. A combination hardmask is formed by forming a first hardmask layer comprising carbon or silicon oxide over the stack, forming a second hardmask layer comprising metal over the first hardmask layer, and patterning the first and second hardmask layers. The stack is etched through the combination hardmask.