The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Nov. 05, 2013
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Jun Yoshikawa, Miyagi, JP;

Yoshio Susa, Miyagi, JP;

Naoki Matsumoto, Miyagi, JP;

Peter L. G. Ventzek, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3266 (2013.01); H01J 37/32669 (2013.01); H01J 37/32678 (2013.01);
Abstract

The present disclosure provides a plasma processing apparatus, including: a processing chamber; an oscillator configured to output high-frequency power; a power supply unit configured to supply the high-frequency power from a specific plasma generating location into the processing chamber; a magnetic field forming unit provided outside the processing chamber and configured to forming a magnetic field at least at the specific plasma generating location; and a control unit configured to control the magnetic field formed by the magnetic field forming unit such that a relationship between an electron collision frequency fe of plasma generated in the processing chamber and a cyclotron frequency fc is fc>fe.


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