The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Feb. 26, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Fu-Chun Huang, Hsinchu County, TW;

Li-Chen Yen, Taichung, TW;

Tzu-Heng Wu, New Taipei, TW;

Yi-Heng Tsai, Hsinchu, TW;

Chun-Ren Cheng, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B81B 3/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0086 (2013.01); B81C 1/00246 (2013.01); B81B 2207/015 (2013.01); B81B 2207/07 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/0181 (2013.01); B81C 2203/035 (2013.01);
Abstract

A semiconductor structure includes a substrate, a dielectric layer disposed over the substrate, a sensing structure disposed over the dielectric layer, a bonding structure disposed over the dielectric layer, a conductive layer covering the sensing structure, and a barrier layer disposed over the dielectric layer, the conductive layer and the bonding structure, wherein the conductive layer and the bonding structure are at least partially exposed from the barrier layer.


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