The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

May. 27, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Shang-Ying Tsai, Pingzhen, TW;

Li-Min Hung, Longtan Township, TW;

Jung-Huei Peng, Jhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B29C 65/00 (2006.01); B32B 37/30 (2006.01); G01N 15/06 (2006.01); G01N 33/00 (2006.01); G01N 33/48 (2006.01); B82Y 10/00 (2011.01); B01L 3/00 (2006.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
B01L 3/502707 (2013.01); B01L 3/502715 (2013.01); B32B 37/30 (2013.01); B01J 2219/00286 (2013.01); B01J 2219/00382 (2013.01); B01J 2219/00637 (2013.01); B01L 2200/12 (2013.01); B01L 2300/0636 (2013.01); B01L 2300/0877 (2013.01); B01L 2300/0887 (2013.01); B01L 2300/0896 (2013.01); B01L 2300/12 (2013.01); B32B 2307/412 (2013.01); B82Y 30/00 (2013.01);
Abstract

The present disclosure provides flow cells and methods of fabricating flow cells. The method includes combining three portions: a first substrate, a second substrate, and microfluidic channels between the first substrate and the second substrate having walls of a photoresist dry film. Through-holes for inlet and outlet are formed in the first substrate or the second substrate. Patterned capture sites are stamped on the first substrate and the second substrate by a nanoimprint lithography process. In other embodiments, parts of the patterned capture sites are selectively attached to a surface chemistry pattern formed of silicon oxide islands each disposed on an outcrop of a soft bottom layer.


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