The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Oct. 14, 2014
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/768 (2006.01); C23C 18/32 (2006.01); H01L 21/288 (2006.01); H01L 23/532 (2006.01); C23C 18/18 (2006.01); C23C 18/16 (2006.01); C23C 18/31 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); C23C 18/1633 (2013.01); C23C 18/1844 (2013.01); C23C 18/31 (2013.01); C23C 18/32 (2013.01); H01L 21/288 (2013.01); H01L 21/7685 (2013.01); H01L 21/76814 (2013.01); H01L 21/76864 (2013.01); H01L 21/76874 (2013.01); H01L 23/53257 (2013.01); H01L 23/53295 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A metal wiring layer can be formed within a recess of a substrate while suppressing the metal wiring layer from being formed at the outside of the recess. A metal wiring layer forming method includes forming a catalyst layerformed of Pd on a tungsten layer W on a bottom surfaceof the recessof the substratewithout forming the catalyst layeron a surfaceof an insulating layer of the recess; and forming a Ni-based metal wiring layeron the catalyst layerof the recess