The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2017

Filed:

May. 13, 2016
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Seul Ki Ahn, Santa Clara, CA (US);

Seung-Young Son, Santa Clara, CA (US);

Gill Yong Lee, Santa Clara, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/3085 (2013.01); H01L 21/3086 (2013.01);
Abstract

Embodiments of the present disclosure provide an apparatus and methods for forming stair-like structures with accurate profiles and dimension control for manufacturing three dimensional (3D) stacked semiconductor devices. In one embodiment, a method of forming stair-like structures on a substrate includes forming a film stack including a dielectric layer and a ruthenium containing material, and etching the ruthenium containing material in the film stack exposed by a patterned photoresist layer utilizing a first etching gas mixture comprising an oxygen containing gas.


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