The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9651869 B1

PDF
Full Text
Expired
Date of Patent:
May. 16, 2017

Filed:

Apr. 07, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chun-Wei Chang, Tainan, TW;

Wang-Pen Mo, Pingtung, TW;

Hung-Chang Hsieh, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); H01L 21/308 (2006.01); H01L 21/027 (2006.01); G03F 7/00 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
G03F 7/20 (2013.01); G03F 7/0002 (2013.01); H01L 21/0274 (2013.01); H01L 21/3085 (2013.01); H01L 21/31058 (2013.01); H01L 21/31144 (2013.01);
Abstract

A method for preparing a wafer includes forming a film layer on a substrate of the wafer; coating the film layer with a photoresist layer; exposing a first portion of the photoresist layer to a beam of light; and patterning a second portion of the photoresist layer after performing exposing the first portion of the photoresist layer. A cross-link reaction is caused on the first portion of the photoresist layer and the first portion of the photoresist layer is converted to a reacted first portion of the photoresist layer. The reacted first portion of the photoresist layer is near an edge of the wafer. The second portion of the photoresist layer is different from the reacted first portion of the photoresist layer. The second portion of the photoresist layer is converted to a patterned second portion of the photoresist layer.


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