The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Oct. 14, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yasutoshi Okuno, Hsinchu, TW;
Cheng-Long Chen, Hsinchu, TW;
Meng-Chun Chang, Taipei, TW;
Sung-Li Wang, Hsinchu County, TW;
Yi-Fang Pai, Hsinchu, TW;
Yusuke Oniki, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method of forming a semiconductor structure includes the following operations: (i) forming a fin structure on a substrate; (ii) epitaxially growing an epitaxy structure from the fin structure; (iii) forming a sacrificial structure surrounding the epitaxy structure; (iv) forming a dielectric layer covering the sacrificial structure; (v) forming an opening passing through the dielectric layer to partially expose the sacrificial structure; (vi) removing a portion of the sacrificial structure to expose a portion of the epitaxy structure; and (vii) forming a contact structure in contact with the exposed portion of the epitaxy structure. A semiconductor structure is disclosed herein as well.