The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2017

Filed:

Dec. 28, 2015
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Wei-Chung Lo, Taipei, TW;

Yu-Wei Huang, Chiayi, TW;

Tao-Chih Chang, Taoyuan, TW;

Chih-Ming Shen, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/15 (2006.01); H01L 33/38 (2010.01); H01L 33/00 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 27/156 (2013.01); H01L 33/005 (2013.01); H01L 33/38 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0066 (2013.01);
Abstract

In an embodiment, a light emitting device comprises a light emitting diode chip and a spherical extending electrode. The light emitting diode chip includes a semiconductor epitaxial structure, a first electrode and a second electrode. The first electrode and the second electrode are disposed on two opposite sides of the semiconductor epitaxial structure, respectively. The first electrode is disposed between the semiconductor epitaxial structure and the spherical extending electrode, and the spherical extending electrode is electrically connected to the semiconductor epitaxial structure electrically through the first electrode. The volume of the spherical extending electrode is greater than that of the light emitting diode chip.


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