The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Feb. 27, 2015
Applied Materials, Inc., Santa Clara, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Srinivas Guggilla, San Jose, CA (US);
Alexandros T. Demos, Dublin, CA (US);
Bhaskar Kumar, Santa Clara, CA (US);
He Ren, San Jose, CA (US);
Priyanka Dash, Menlo Park, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of forming features in a dielectric layer is described. A via, trench or a dual-damascene structure may be present in the dielectric layer prior to depositing a conformal aluminum nitride layer. The conformal aluminum nitride layer is configured to serve as a barrier to prevent diffusion across the barrier. The methods of forming the aluminum nitride layer involve the alternating exposure to two precursor treatments (like ALD) to achieve high conformality. The high conformality of the aluminum nitride barrier layer enables the thickness to be reduced and the effective conductivity of the subsequent gapfill metal layer to be increased.