Method for producing sos substrates, and sos substrate

Abstract

A method for producing SOS substrates which can be incorporated into a semiconductor production line, and is capable of producing SOS substrates which have few defects and no variation in defects, and in a highly reproducible manner, or in other words, a method for producing SOS substrates by: forming an ion-injection region () by injecting ions from the surface of a silicon substrate (); adhering the ion-injection surface of the silicon substrate () and the surface of a sapphire substrate () to one another directly or with an insulating film () interposed therebetween; and then obtaining an SOS substrate () having a silicon layer () on the sapphire substrate (), by detaching the silicon substrate in the ion-injection region (). This method is characterized in that the orientation of the sapphire substrate () is a C-plane having an off-angle of 1 degree or less.