The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Jul. 18, 2013
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Shigeru Konishi, Annaka, JP;
Yoshihiro Kubota, Annaka, JP;
Makoto Kawai, Annaka, JP;
Shoji Akiyama, Annaka, JP;
Kazutoshi Nagata, Annaka, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Abstract
A method for producing SOS substrates which can be incorporated into a semiconductor production line, and is capable of producing SOS substrates which have few defects and no variation in defects, and in a highly reproducible manner, or in other words, a method for producing SOS substrates by: forming an ion-injection region () by injecting ions from the surface of a silicon substrate (); adhering the ion-injection surface of the silicon substrate () and the surface of a sapphire substrate () to one another directly or with an insulating film () interposed therebetween; and then obtaining an SOS substrate () having a silicon layer () on the sapphire substrate (), by detaching the silicon substrate in the ion-injection region (). This method is characterized in that the orientation of the sapphire substrate () is a C-plane having an off-angle of 1 degree or less.