The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Jun. 30, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yu-Hung Cheng, Tainan, TW;
Cheng-Ta Wu, Chiayi County, TW;
Yeur-Luen Tu, Taichung, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Ru-Liang Lee, Hsinchu, TW;
Tung-I Lin, Tainan, TW;
Wei-Li Chen, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate and a trench isolation. The trench isolation is located in the semiconductor substrate, and includes an epitaxial layer and a dielectric material. The epitaxial layer is in a trench of the semiconductor and is peripherally enclosed thereby, in which the epitaxial layer is formed by performing etch and epitaxy processes. The etch and epitaxy process includes etching out a portion of a sidewall of the trench and a portion of a bottom surface of the trench and forming the epitaxial layer conformal to the remaining portion of the sidewall and the remaining portion of the bottom surface. The dielectric material is peripherally enclosed by the epitaxial layer.