The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2017

Filed:

Aug. 20, 2015
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Wen-Ching Tsai, Hsinchu, TW;

Ming-Fa Chen, Taichung, TW;

Chen-Hua Yu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 21/66 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 21/56 (2006.01); H01L 21/82 (2006.01);
U.S. Cl.
CPC ...
H01L 22/32 (2013.01); H01L 21/563 (2013.01); H01L 21/82 (2013.01); H01L 22/14 (2013.01); H01L 23/3171 (2013.01); H01L 23/538 (2013.01); H01L 23/5384 (2013.01); H01L 24/03 (2013.01); H01L 24/09 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2224/0236 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/08235 (2013.01); H01L 2924/37001 (2013.01);
Abstract

Provided is a three dimensional integrated circuit structure including a first die, a through substrate via and a connector. The first die is bonded to a second die with a first dielectric layer of the first die and a second dielectric layer of the second die, wherein a first passivation layer is between the first dielectric layer and a first substrate of the first die, and a first test pad is embedded in the first passivation layer. The through substrate via penetrates through the first die and is electrically connected to the second die. The connector is electrically connected to the first die and the second die through the through substrate via.


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