The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2017

Filed:

Apr. 25, 2013
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu Science Park, TW;

Inventors:

Chih-Yi Chang, New Taipei, TW;

Liang-Yueh Ou Yang, New Taipei, TW;

Chen-Yuan Kao, Zhudong Township, TW;

Hung-Wen Su, Jhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05B 19/418 (2006.01); H01L 23/522 (2006.01); H01L 21/288 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
G05B 19/41835 (2013.01); H01L 23/522 (2013.01); H01L 21/2885 (2013.01); H01L 21/76877 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A computer-implemented system and method of compensating for filling material losses in a semiconductor process. The computer-implemented method includes determining using a computer a pattern density difference between a first circuit pattern above a semiconductor substrate and a second circuit pattern adjacent to the first pattern. A dummy pattern is inserted between the first pattern and the second pattern so as to compensate for an estimated loss of filling material induced during electrochemical plating by the pattern density difference exceeding a threshold pattern density difference.


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