The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
May. 14, 2013
United Microelectronics Corp., Hsinchu, TW;
Yi-Ting Wu, Taipei, TW;
Cheng-Tung Huang, Kaohsiung, TW;
Tsung-Han Lee, Tainan, TW;
Yi-Han Ye, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for deriving characteristic values of a MOS transistor is described. A set of ηvalues is provided. A set of Vvalues (i=1 to M, M≧3) is provided. A set of RSD(i=1 to M−1, j=i+1 to M) values each under a pair of Vand V, or a set of V(q is one of 1 to M, j is 1 to M excluding q) values under Vis derived for each η, with an iteration method. The ηvalue making the set of RSDvalues or Vvalues closest to each other is determined as an accurate ηvalue. The mean value of RSDat the accurate ηvalue is calculated as an accurate RSD value.