The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2017

Filed:

May. 11, 2015
Applicant:

Jordan Valley Semiconductors Ltd., Migdal HaEmek, IL;

Inventors:

Isaac Mazor, Haifa, IL;

Fouad Atrash, Akko, IL;

Alex Tokar, Haifa, IL;

Olga Ostrovsky, Haifa, IL;

Assignee:

BRUKER JV ISRAEL LTD., Migdal Haemek, IL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/00 (2006.01); G01N 23/207 (2006.01); G01N 23/223 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G01N 23/2076 (2013.01); G01N 23/223 (2013.01); G01N 2223/6116 (2013.01); H01L 22/12 (2013.01);
Abstract

A method for X-ray Fluorescence (XRF) analysis includes directing an X-ray beam onto a sample and measuring an XRF signal excited from the sample, in a reference measurement in which the sample includes one or more first layers formed on a substrate, and in a target measurement after one or more second layers are formed on the substrate in addition to the first layers, so as to produce a reference XRF spectrum and a target XRF spectrum, respectively. A contribution of the first layers to the target XRF spectrum is reduced using the reference XRF spectrum. A parameter of at least one of the second layers is estimated using the target XRF spectrum in which the contribution of the first layers has been reduced.


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