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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9627608 B1

PDFFull Text
Expired
Date of Patent:
Apr. 18, 2017

Filed:

Sep. 11, 2014

Dielectric repair for emerging memory devices

Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Nerissa Draeger, Fremont, CA (US);

Thorsten Lill, Santa Clara, CA (US);

Diane Hymes, San Jose, CA (US);

Assignee:

LAM RESEARCH CORPORATION, Fremont, CA (US);

Attorney:
Primary Examiner:

Phat X Cao

Assistant Examiner:

David Goodwin

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); C23C 16/455 (2006.01); C23C 16/02 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); C23C 16/0227 (2013.01); C23C 16/45544 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract

Systems and method include providing a non-volatile random access memory (NVRAM) stack including a plurality of layers. The plurality of layers includes a dielectric layer and a metal layer. The metal layer of the NVRAM stack is patterned. The patterning causes damage to lateral side portions of the dielectric layer. The lateral portions of the dielectric layer are repaired by depositing dielectric material on the lateral side portions of the dielectric layer.

Find Patent Forward Citations

Draeger, Nerissa. (2017). Dielectric repair for emerging memory devices (U.S. Patent No. 9627608). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9627608

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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