The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Jun. 05, 2015
National Taiwan University, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Jhih-Yang Yan, Taipei, TW;
Samuel C. Pan, Hsin-Chu, TW;
Chee Wee Liu, Taipei, TW;
Hung-Yu Yeh, Taichung, TW;
Da-Zhi Zhang, New Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
National Taiwan University, Taipei, TW;
Abstract
Three-dimensional (3D) transistors and methods of manufacturing thereof include a first semiconductor fin extending over a substrate. The first semiconductor fin has a vertical recess extending from a first sidewall of the first semiconductor fin toward a second sidewall of the first semiconductor fin opposite the first sidewall. A distance between two opposing sidewalls of the vertical recess decreases as the vertical recess extends toward the second sidewall of the first semiconductor fin. The device further includes a vertically recessed channel region between the second sidewall of the first semiconductor fin and a bottom of the vertical recess, source/drain (S/D) regions at opposite ends of the vertically recessed channel region, and a gate stack over the vertically recessed channel region.