The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Apr. 11, 2012
Shih-ming Chang, Zhubei, TW;
Ken-hsien Hsieh, Taipei, TW;
Tsong-hua Ou, Taipei, TW;
Ru-gun Liu, Hsinchu, TW;
Fang-yu Fan, Hukou Township, Hsinchu County, TW;
Yuan-te Hou, Hsinchu, TW;
Shih-Ming Chang, Zhubei, TW;
Ken-Hsien Hsieh, Taipei, TW;
Tsong-Hua Ou, Taipei, TW;
Ru-Gun Liu, Hsinchu, TW;
Fang-Yu Fan, Hukou Township, Hsinchu County, TW;
Yuan-Te Hou, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A multilayer device and method for fabricating a multilayer device is disclosed. An exemplary multilayer device includes a substrate, a first interlayer dielectric (ILD) layer disposed over the substrate, and a first conductive layer including a first plurality of conductive lines formed in the first ILD layer. The device further includes a second ILD layer disposed over the first ILD layer, and a second conductive layer including a second plurality of conductive lines formed in the second ILD layer. At least one conductive line of the second plurality of conductive lines is formed adjacent to at least one conductive line of the first plurality of conductive lines. The at least one conductive line of the second plurality of conductive lines contacts the at least one conductive line of the first plurality of conductive lines at an interface.