The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9620481 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 11, 2017

Filed:

May. 19, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Daniel C. Edelstein, White Plains, NY (US);

Douglas C. La Tulipe, Jr., Guilderland, NY (US);

Wei Lin, Albany, NY (US);

Deepika Priyadarshini, Guilderland, NY (US);

Spyridon Skordas, Wappingers Falls, NY (US);

Tuan A. Vo, Albany, NY (US);

Kevin R. Winstel, East Greenbush, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 25/065 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/76885 (2013.01); H01L 21/76898 (2013.01); H01L 23/532 (2013.01); H01L 23/5329 (2013.01); H01L 23/53233 (2013.01); H01L 24/00 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/09 (2013.01); H01L 24/80 (2013.01); H01L 24/89 (2013.01); H01L 25/50 (2013.01); H01L 21/76847 (2013.01); H01L 21/76849 (2013.01); H01L 21/76867 (2013.01); H01L 23/481 (2013.01); H01L 2224/03845 (2013.01); H01L 2224/05007 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05547 (2013.01); H01L 2224/05576 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05686 (2013.01); H01L 2224/08121 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/80009 (2013.01); H01L 2224/80097 (2013.01); H01L 2224/80357 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/0104 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01024 (2013.01); H01L 2924/01025 (2013.01); H01L 2924/01026 (2013.01); H01L 2924/01027 (2013.01); H01L 2924/01041 (2013.01); H01L 2924/01042 (2013.01); H01L 2924/01072 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/05442 (2013.01);
Abstract

A metallic dopant element having a greater oxygen-affinity than copper is introduced into, and/or over, surface portions of copper-based metal pads and/or surfaces of a dielectric material layer embedding the copper-based metal pads in each of two substrates to be subsequently bonded. A dopant-metal silicate layer may be formed at the interface between the two substrates to contact portions of metal pads not in contact with a surface of another metal pad, thereby functioning as an oxygen barrier layer, and optionally as an adhesion material layer. A dopant metal rich portion may be formed in peripheral portions of the metal pads in contact with the dopant-metal silicate layer. A dopant-metal oxide portion may be formed in peripheral portions of the metal pads that are not in contact with a dopant-metal silicate layer.


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