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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9618850 B1

PDFFull Text
Date of Patent:
Apr. 11, 2017

Filed:

Oct. 21, 2015

Pattern forming process and shrink agent

Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Jun Hatakeyama, Joetsu, JP;

Kazuhiro Katayama, Joetsu, JP;

Koji Hasegawa, Joetsu, JP;

Kenji Funatsu, Joetsu, JP;

Assignee:

SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;

Attorney:

Westerman, Hattori, Daniels & Adrian, LLP

Primary Examiner:

Amanda C Walke

Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/40 (2006.01); G03F 7/32 (2006.01); G03F 7/004 (2006.01); C08F 22/22 (2006.01); C08F 226/02 (2006.01); C08F 26/02 (2006.01); C08F 220/26 (2006.01); C08F 226/06 (2006.01); C08F 220/34 (2006.01); C08F 220/30 (2006.01); H01L 21/027 (2006.01); C08F 220/36 (2006.01); G03F 7/039 (2006.01);
U.S. Cl.
CPC ...
G03F 7/405 (2013.01); C08F 22/22 (2013.01); C08F 26/02 (2013.01); C08F 220/26 (2013.01); C08F 220/30 (2013.01); C08F 220/34 (2013.01); C08F 220/36 (2013.01); C08F 226/02 (2013.01); C08F 226/06 (2013.01); G03F 7/0045 (2013.01); G03F 7/0397 (2013.01); G03F 7/11 (2013.01); G03F 7/325 (2013.01); G03F 7/40 (2013.01); H01L 21/0274 (2013.01);
Abstract

A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a polymer comprising recurring units having an acid labile group-substituted hydroxyl and/or carboxyl group in a C-Cester or C-Cketone solvent, baking the coating, and removing the excessive shrink agent via organic solvent development for thereby shrinking the size of spaces in the pattern.

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