The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

Feb. 25, 2016
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Nader Shamma, Cupertino, CA (US);

Thomas Mountsier, San Jose, CA (US);

Donald Schlosser, San Jose, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); G03F 7/11 (2006.01); G03F 7/09 (2006.01); H01L 21/314 (2006.01); G03F 7/16 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); G03F 7/092 (2013.01); G03F 7/094 (2013.01); G03F 7/16 (2013.01); H01L 21/0274 (2013.01); H01L 21/0276 (2013.01); H01L 21/0332 (2013.01); H01L 21/3146 (2013.01); H01L 21/31144 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01);
Abstract

Provided herein are multi-layer stacks for use in extreme ultraviolet lithography tailored to achieve optimum etch contrast to shrink features and smooth the edges of features while enabling use of an optical leveling sensor with little or reduced error. The multi-layer stacks may include an atomically smooth layer with an average local roughness of less than a monolayer, and one or more underlayers, which may be between a target layer to be patterned and a photoresist. Also provided are methods of depositing multi-layer stacks for use in extreme ultraviolet lithography.


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