The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

Sep. 24, 2015
Applicant:

Tokyo Ohka Kogyo Co., Ltd., Kawasaki-shi, JP;

Inventors:

Yoichi Hori, Kawasaki, JP;

Takayoshi Mori, Kawasaki, JP;

Ryoji Watanabe, Kawasaki, JP;

Rikita Tsunoda, Kawasaki, JP;

Assignee:

TOKYO OHKA KOGYO CO., LTD., Kawasaki-Shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/40 (2006.01); G03F 7/004 (2006.01); C07C 321/28 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); C07D 295/155 (2006.01); G03F 7/30 (2006.01); C07D 295/26 (2006.01); C07D 213/79 (2006.01); G03F 7/039 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C07C 321/28 (2013.01); C07D 213/79 (2013.01); C07D 295/155 (2013.01); C07D 295/26 (2013.01); G03F 7/0045 (2013.01); G03F 7/0046 (2013.01); G03F 7/0397 (2013.01); G03F 7/20 (2013.01); G03F 7/30 (2013.01); G03F 7/32 (2013.01); G03F 7/325 (2013.01); G03F 7/40 (2013.01); G03F 7/405 (2013.01);
Abstract

A method of forming a resist pattern, including: a step A in which a positive resist composition is applied to a substrate to form a positive resist film, the positive resist film is exposed and the positive resist film is subjected to an alkali development to form a first resist pattern; a step B in which a solution containing an acid or a thermoacid generator is applied to the substrate whereon the first resist pattern is formed, so as to cover the first resist pattern, to form a structure having the first resist pattern and a first layer covering the first resist pattern; a step C in which the structure is heated and the solubility of the first resist pattern in an organic solvent is changed under action of the acid or under action of acid generated from the thermoacid generator; and a step D in which the structure after heating is developed with the organic solvent to remove a region of the first resist pattern other than the region of the first resist pattern where the solubility in the organic solvent is changed, so as to form a second resist pattern.


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