The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Aug. 20, 2012
Roey Shaviv, Palo Alto, CA (US);
Kirk Ostrowski, San Jose, CA (US);
David Cheung, Foster City, CA (US);
Joon Park, Dublin, CA (US);
Bayu Thedjoisworo, Santa Clara, CA (US);
Patrick J. Lord, San Jose, CA (US);
Roey Shaviv, Palo Alto, CA (US);
Kirk Ostrowski, San Jose, CA (US);
David Cheung, Foster City, CA (US);
Joon Park, Dublin, CA (US);
Bayu Thedjoisworo, Santa Clara, CA (US);
Patrick J. Lord, San Jose, CA (US);
Novellus Systems, Inc., Fremont, CA (US);
Abstract
Provided herein are methods and apparatus of hydrogen-based photoresist strip operations that reduce dislocations in a silicon wafer or other substrate. According to various embodiments, the hydrogen-based photoresist strip methods can employ one or more of the following techniques: 1) minimization of hydrogen budget by using short processes with minimal overstrip duration, 2) providing dilute hydrogen, e.g., 2%-16% hydrogen concentration, 3) minimization of material loss by controlling process conditions and chemistry, 4) using a low temperature resist strip, 5) controlling implant conditions and concentrations, and 6) performing one or more post-strip venting processes. Apparatus suitable to perform the photoresist strip methods are also provided.