The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

Aug. 28, 2014
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chun-Yu Lin, Hsinchu, TW;

Yi-Jie Chen, Hsinchu, TW;

Feng-Yuan Chiu, Zhudong Township, TW;

Ying-Chou Cheng, Zhubei, TW;

Kuei-Liang Lu, Hsinchu, TW;

Ya-Hui Chang, Hsinchu, TW;

Ru-Gun Liu, Zhubei, TW;

Tsai-Sheng Gau, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/42 (2012.01); G03F 1/36 (2012.01); G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
G03F 1/42 (2013.01); G03F 1/36 (2013.01); G06F 17/5072 (2013.01);
Abstract

A photomask and method for fabricating an integrated circuit is provided. The photomask includes a plurality of main features, enclosed in at least one first region and at least one second region, wherein the first region comprises single the main feature and the second region comprises multiple the main features; and a plurality of assistant features disposed between the first region and the second region, or between the second regions. The photomask enhances the accuracy of the critical dimension and facilitate fabricating an integrated circuit.


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