The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Jun. 17, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Ching-Fu Yeh, Hsin-Chu, TW;
Hsiang-Huan Lee, Jhudong Township, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76883 (2013.01); H01L 21/7685 (2013.01); H01L 21/76807 (2013.01); H01L 21/76846 (2013.01); H01L 21/76855 (2013.01); H01L 21/76858 (2013.01); H01L 21/76885 (2013.01); H01L 21/76886 (2013.01); H01L 23/53219 (2013.01); H01L 23/53223 (2013.01); H01L 23/53295 (2013.01); H01L 2221/1036 (2013.01); H01L 2221/1078 (2013.01); H01L 2924/0002 (2013.01);
Abstract
An aluminum interconnection apparatus comprises a metal structure formed over a substrate, wherein the metal structure is formed of a copper and aluminum alloy, a first alloy layer formed underneath the metal structure and a first barrier layer formed underneath the first alloy layer, wherein the first barrier layer is generated by a reaction between the first alloy layer and an adjacent dielectric layer during a thermal process.