The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2017

Filed:

Jun. 12, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chia-Chu Liu, Shin-Chu, TW;

Min-Chang Liang, Zhu-Dhong Town, TW;

Mu-Chi Chiang, Hsinchu, TW;

Kuei-Shun Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 21/308 (2006.01); H01L 21/3213 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/28132 (2013.01); H01L 21/3086 (2013.01); H01L 21/32139 (2013.01); H01L 29/42376 (2013.01); H01L 29/517 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 27/10826 (2013.01); H01L 29/78 (2013.01);
Abstract

A transistor including a gate structure with a first portion and a second portion; the first and second portions each have a first edge and an opposing second edge that are substantially collinear. The gate structure also includes an offset portion interposing the first portion and the second portion. The offset portion has a third edge and an opposing fourth edge. The third edge and the fourth edge are non-collinear with the first and second edges of the first and second portions of the gate structure. For example, the offset portion is offset or shifted from the first and second portions.


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