The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Feb. 17, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Yi-Lin Chuang, Taipei, TW;
Chun-Cheng Ku, Zhubei, TW;
Chin-Her Chien, Chung-Li, TW;
Wei-Pin Changchien, Taichung, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/02 (2006.01); G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); G06F 17/5072 (2013.01); G06F 17/5081 (2013.01); H01L 29/0649 (2013.01);
Abstract
An integrated circuit (IC) semiconductor device has a high oxide definition (OD) density region, a low OD density region adjacent to the high OD density region, and dummy cells in the high OD density region and the low OD density region to smooth a density gradient between the high OD density region and the low OD density region.