The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2017

Filed:

Jul. 21, 2014
Applicant:

Crossbar, Inc., Santa Clara, CA (US);

Inventors:

Harry Yue Gee, Milpitas, CA (US);

Steven Patrick Maxwell, Sunnyvale, CA (US);

Natividad Vasquez, Jr., San Francisco, CA (US);

Sundar Narayanan, Cupertino, CA (US);

Assignee:

CROSSBAR, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1666 (2013.01);
Abstract

A method includes patterning a layered structure comprising a monolithic stack including a bottom electrode surrounded by a dielectric material, a switching material, a barrier material, a dielectric hardmask, and a patterned photoresist formed above and adjacent to a portion of the dielectric hardmask. The patterning includes patterning the dielectric hardmask using a first etchant and employing the patterned photoresist as a mask, patterning the barrier material using a second etchant and employing a portion of the dielectric hardmask remaining after the patterning the dielectric hardmask as a mask, and patterning the switching material using ion milling or etching and employing the portion of the dielectric hardmask remaining after the patterning the barrier material as a mask.


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