The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
May. 20, 2015
Applied Materials, Inc., Santa Clara, CA (US);
Xinyu Fu, Pleasanton, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Mei Chang, Saratoga, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Guoqiang Jian, San Jose, CA (US);
Yixiong Yang, San Jose, CA (US);
Vikash Banthia, Mountain View, CA (US);
Jonathan Bakke, Sunnyvale, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods for etching a substrate are provided herein. In some embodiments, a method for etching a substrate disposed within a processing volume of a process chamber includes: (a) exposing a first layer disposed atop the substrate to a first gas comprising tungsten chloride (WCl) for a first period of time and at a first pressure, wherein x is 5 or 6; (b) purging the processing volume of the first gas using an inert gas for a second period of time; (c) exposing the substrate to a hydrogen-containing gas for a third period of time to etch the first layer after purging the processing volume of the first gas; and (d) purging the processing volume of the hydrogen-containing gas using the inert gas for a fourth period of time.