The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2017

Filed:

Apr. 20, 2015
Applicants:

Heath A. Pois, Fremont, CA (US);

Wei Ti Lee, San Jose, CA (US);

Inventors:

Heath A. Pois, Fremont, CA (US);

Wei Ti Lee, San Jose, CA (US);

Assignee:

ReVera, Incorporated, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/22 (2006.01); G01B 15/02 (2006.01); G01N 23/223 (2006.01); G01N 23/227 (2006.01);
U.S. Cl.
CPC ...
G01N 23/2208 (2013.01); G01B 15/02 (2013.01); G01N 23/223 (2013.01); G01N 23/2273 (2013.01); G01N 2223/61 (2013.01); G01N 2223/6116 (2013.01);
Abstract

Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.


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