The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Feb. 03, 2015
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
En-Chiuan Liou, Tainan, TW;
Ssu-I Fu, Kaohsiung, TW;
Chia-Lin Lu, Taoyuan, TW;
Shih-Hung Tsai, Tainan, TW;
Chih-Wei Yang, Kaohsiung, TW;
Chia-Ching Lin, Kaohsiung, TW;
Chia-Hsun Tseng, Tainan, TW;
Rai-Min Huang, Taipei, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/84 (2006.01); H01L 27/06 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 27/12 (2006.01); H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0684 (2013.01); H01L 21/76232 (2013.01); H01L 29/0649 (2013.01); H01L 21/76 (2013.01); H01L 21/762 (2013.01); H01L 27/1211 (2013.01); H01L 29/6681 (2013.01); H01L 29/7846 (2013.01); H01L 29/7851 (2013.01);
Abstract
The present invention provides a semiconductor structure, including a substrate, a shallow trench isolation (STI) disposed in the substrate, a plurality of first fin structures disposed in the substrate, where each first fin structure and the substrate have same material, and a plurality of second fin structures disposed in the STI, where each second fin structure and the STI have same material.