The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Jul. 18, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Hsiang-Lun Kao, Taoyuan, TW;

Hsiang-Wei Liu, Tainan, TW;

Tai-I Yang, Hsin-Chu, TW;

Jian-Hua Chen, Hsin-Chu, TW;

Yu-Chieh Liao, Taoyuan, TW;

Yung-Chih Wang, Taoyuan, TW;

Tien-Lu Lin, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/263 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/2633 (2013.01); H01L 21/31111 (2013.01); H01L 21/7682 (2013.01); H01L 21/76885 (2013.01); H01L 23/5222 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53295 (2013.01); H01L 21/76834 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A device comprises a first rounded metal line in a metallization layer over a substrate, a second rounded metal line in the metallization layer, a first air gap between sidewalls of the first rounded metal line and the second metal line, a first metal line in the metallization layer, wherein a top surface of the first metal line is higher than a top surface of the second rounded metal line and a bottom surface of the first metal line is substantially level with a bottom surface of the second rounded metal line and a second air gap between sidewalls of the second rounded metal line and the first metal line.


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