The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Dec. 04, 2015
Infineon Technologies Ag, Neubiberg, DE;
Johannes Georg Laven, Taufkirchen, DE;
Christian Jaeger, Munich, DE;
Joachim Mahler, Regensburg, DE;
Daniel Pedone, Munich, DE;
Anton Prueckl, Schierling, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Andre Schwagmann, Lehe, DE;
Patrick Schwarz, Kallmuenz, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes a first load terminal electrically coupled to a source zone of a transistor cell. A gate terminal is electrically coupled to a gate electrode which is capacitively coupled to a body zone of the transistor cell. The source and body zones are formed in a semiconductor portion. A thermoresistive element is thermally connected to the semiconductor portion and is electrically coupled between the gate terminal and the first load terminal. Above a maximum operation temperature specified for the semiconductor device, an electric resistance of the thermoresistive element decreases by at least two orders of magnitude within a critical temperature span of at most 50 Kelvin.