The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
May. 05, 2014
Applied Materials, Inc., Santa Clara, CA (US);
Mikhail Korolik, San Jose, CA (US);
Nitin K. Ingle, San Jose, CA (US);
Jingchun Zhang, San Jose, CA (US);
Anchuan Wang, San Jose, CA (US);
Jie Liu, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods of selectively etching silicon relative to silicon germanium are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the silicon. The plasmas effluents react with exposed surfaces and selectively remove silicon while very slowly removing other exposed materials. The methods are useful for removing SiGefaster than SiGe, for X<Y. In some embodiments, the silicon germanium etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.