The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Dec. 21, 2012
Micronit Microfluidics B.v., Enschede, NL;
Ronny Van 'T Oever, Epse, NL;
Marko Theodoor Blom, Enschede, NL;
Jeroen Haneveld, Lochem, NL;
Johannes Oonk, Enschede, NL;
Marinus Bernardus Olde Riekerink, Losser, NL;
Peter Tijssen, Enschede, NL;
Hendrik Jan Hildebrand Tigelaar, Enschede, NL;
Jean-Noël Fehr, Neuchâtel, CH;
Jean-Christophe Roulet, Lignieres, CH;
Amitava Gupta, Roanoke, VA (US);
Micronit Microfluidics B.V., Enschede, NL;
Abstract
The invention relates to method for bonding at least two substrates, for example made from glass, silicon, ceramic, aluminum, or boron, by using an intermediate thin film metal layer for providing the bonding, said method comprising the following steps of: a) providing said two substrates; b) depositing said thin film metal layer on at least a part of a surface of a first substrate of the two substrates; c) bringing a surface of the second substrate into contact with said thin film metal layer on said surface of the first substrate such that a bonding between the second substrate and the thin film metal layer on the first substrate is provided; and d) at least locally strengthening the bonding between the second substrate and the thin film metal layer on the first substrate. The invention also relates to a device comprising two substrates, for example made from glass, silicon, ceramic, aluminum, or boron, and an intermediate thin film metal layer.