The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Aug. 14, 2014
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chih Hsiung Lin, Hsinchu County, TW;
Chia-Der Chang, Hsinchu, TW;
Pin-Cheng Hsu, Hsinchu County, TW;
Min-Hsiung Chiang, New Taipei, TW;
Shu-Wei Chung, Taichung, TW;
Hao Wen Hsu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
Some embodiments of the present disclosure provide a semiconductor device including a substrate and a gate structure on the substrate. A first well region of a first conductivity type is in the substrate, close to a first sidewall of the gate structure. A second well region of a second conductivity type is also in the substrate close to the second sidewall of the gate structure. A conductive region is disposed in the second well region. The conductive region can be an epitaxy region. A chemical composition inside the second well region between the conductive region and the gate structure is essentially homogeneous as a chemical composition throughout the second well region.