The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
May. 28, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Cheng-Chieh Lai, New Taipei, TW;
Kuang-Hsin Chen, Taoyuan, TW;
Shih-Kai Fan, Hsinchu, TW;
Yung-Hsien Wu, Hsinchu, TW;
Yu-Hsun Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor component, which includes a substrate, an interfacial layer disposed on the substrate, a first metal gate structure and a second metal gate structure disposed on the substrate. The first metal gate structure includes a first high-k dielectric layer disposed on the interfacial layer, and a first metal gate layer disposed on the first high-k dielectric layer. The second metal gate structure includes a second high-k dielectric layer disposed on the interfacial layer, a third high-k dielectric layer disposed on the second high-k dielectric layer, and a second metal gate layer disposed on the third high-k dielectric layer.