The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
May. 11, 2015
United Microelectronics Corp., Hsinchu, TW;
Pin-Hong Chen, Yunlin County, TW;
Kuo-Chih Lai, Tainan, TW;
Chia-Chang Hsu, Kaohsiung, TW;
Chun-Chieh Chiu, Keelung, TW;
Li-Han Chen, Tainan, TW;
Shu-Min Huang, Tainan, TW;
Min-Chuan Tsai, New Taipei, TW;
Hsin-Fu Huang, Tainan, TW;
Chi-Mao Hsu, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of forming a contact structure is provided. A silicon-containing substrate is provided with a composite dielectric layer formed thereon. An opening penetrates through the composite dielectric layer and exposes a portion of the source/drain region. A titanium nitride layer is formed in the opening, and the titanium nitride layer is in contact with the exposed portion of the source/drain region. The titanium nitride layer is annealed, so that the bottom portion of the titanium nitride layer is partially transformed into a titanium silicide layer. A conductive layer is formed to fill up the opening.