The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2017

Filed:

Aug. 28, 2014
Applicants:

Sinmat, Inc., Gainesville, FL (US);

University of Florida Research Foundation, Inc., Gainesville, FL (US);

Inventors:

Rajiv K. Singh, Newberry, FL (US);

Arul Chakkaravarthi Arjunan, Gainesville, FL (US);

Kannan Balasundaram, Gainesville, FL (US);

Deepika Singh, Newberry, FL (US);

Wei Bai, Gainesville, FL (US);

Assignees:

Sinmat, Inc., Gainesville, FL (US);

University of Florida Research Foundation, Inc., Gainesville, FL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C09G 1/04 (2006.01); C09K 3/14 (2006.01); C09G 1/02 (2006.01); C30B 33/00 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); B24B 37/04 (2012.01);
U.S. Cl.
CPC ...
C09G 1/04 (2013.01); B24B 37/044 (2013.01); C09G 1/02 (2013.01); C09K 3/1436 (2013.01); C09K 3/1463 (2013.01); C30B 33/00 (2013.01); H01L 21/02002 (2013.01); H01L 21/02024 (2013.01); H01L 21/30625 (2013.01);
Abstract

A chemical mechanical polishing (CMP) includes providing a slurry including composite particles dispersed in a water-based carrier that comprise a plurality of hard particles on an outer surface of a soft-core particle. The hard particles have a Mohs hardness at least 1 greater than a Mohs hardness of the soft core particle and/or a Vickers hardness at least 500 Kg/mmgreater than the soft-core particle. A substrate having a substrate surface with a hardness greater than a Mohs number of 6 or a Vickers hardness greater than 1,000 kg/mmis placed into a CMP apparatus having a rotating polishing pad, and CMP is performed with the rotating polishing pad and the slurry to polish the substrate surface.


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