The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Dec. 30, 2015
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Ravi Pillarisetty, Portland, OR (US);
Mantu Hudait, Blacksburg, VA (US);
Marko Radosavljevic, Portland, OR (US);
Willy Rachmady, Beaverton, OR (US);
Gilbert Dewey, Hillsboro, OR (US);
Jack Kavalieros, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/772 (2006.01); H01L 29/12 (2006.01); H01L 29/15 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 29/205 (2006.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
H01L 29/155 (2013.01); H01L 21/823807 (2013.01); H01L 21/823892 (2013.01); H01L 29/0653 (2013.01); H01L 29/205 (2013.01); H01L 29/207 (2013.01); H01L 29/66431 (2013.01); H01L 29/66462 (2013.01); H01L 29/66795 (2013.01);
Abstract
Embodiments of an apparatus and methods for providing three-dimensional complementary metal oxide semiconductor devices comprising modulation doped transistors are generally described herein. Other embodiments may be described and claimed, which may include forming a modulation doped heterostructure, comprising forming an active portion having a first bandgap and forming a delta doped portion having a second bandgap.