The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
May. 21, 2015
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Fu-Ting Sung, Taoyuan, TW;
Chung-Chiang Min, Hsinchu County, TW;
Wei-Hang Huang, Kaohsiung, TW;
Shih-Chang Liu, Kaohsiung, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/283 (2006.01); H01L 27/115 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 29/34 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 23/528 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); H01L 21/28 (2013.01); H01L 21/28273 (2013.01); H01L 23/528 (2013.01); H01L 29/34 (2013.01); H01L 29/4234 (2013.01); H01L 29/42324 (2013.01); H01L 29/4916 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01); H01L 29/7831 (2013.01); H01L 29/7881 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a control gate formed over the substrate. The semiconductor device structure further includes a memory gate formed over the substrate and a first spacer formed on a sidewall of the memory gate. The semiconductor device structure further includes a contact formed over the memory gate, wherein a portion of the contact extends into the first spacer.