The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2017

Filed:

Jul. 22, 2014
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yung-Yao Lee, Zhubei, TW;

Ying-Ying Wang, Xin-Zhu, TW;

Shang-Wern Chang, Zhubei, TW;

Heng-Hsin Liu, New Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 11/00 (2006.01); G06T 7/00 (2006.01); G01N 21/956 (2006.01); G01N 21/88 (2006.01);
U.S. Cl.
CPC ...
G06T 7/001 (2013.01); G01N 21/956 (2013.01); G01N 21/95607 (2013.01); G01N 21/8851 (2013.01); G01N 2021/8887 (2013.01); G06T 2207/30148 (2013.01);
Abstract

The present disclosure provides an overlay metrology method, an overlay control method and an overlay control system. The overlay metrology method includes capturing a current layer image of a current overlay mark on a current layer with a current focal length and capturing a previous layer image of a previous overlay mark on a previous layer with a previous focal length. Then, the overlay metrology method further includes combining the current layer image with the previous layer image to form an overlay mark image and determining an overlay error between the current overlay mark and the previous overlay mark based on the overlay mark image.


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