The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2017

Filed:

Mar. 13, 2015
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Keisuke Suzuki, Nirasaki, JP;

Hiroki Murakami, Nirasaki, JP;

Shingo Hishiya, Nirasaki, JP;

Kentaro Kadonaga, Nirasaki, JP;

Minoru Obata, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/30 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
C23C 16/30 (2013.01); C23C 16/4408 (2013.01); C23C 16/45529 (2013.01); C23C 16/45531 (2013.01);
Abstract

A method of forming a thin film containing a doping element in a vacuum atmosphere, which includes: supplying a source gas into a processing vessel being under the vacuum atmosphere through a source gas supply unit such that a source of the source gas is adsorbed onto a substrate in the processing vessel; repeating, a plurality of times, a sequence of operations of supplying a doping gas containing the doping element into the processing vessel through a doping gas supply unit, followed by sealing the doping gas inside the processing vessel, followed by vacuum-exhausting the processing vessel; supplying a reaction gas into the processing vessel through a reaction gas supply unit such that the reaction gas reacts with the source to produce a reaction product; and replacing an internal atmosphere of the processing vessel, the replacing being performed between the operations.


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